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ELECTRONIC DEVICES AND CIRCUITS Unit – 2 Unit – 3 Unit – 4 UNIT-I p-n Junction Diode: Qualitative Theory of p-n Junction. Volt-Ampere Characteristics, Temperature dependence of V I Characteristics. UNIT- VI: Field Effect Transistor The Junction field effect transistor (construction, principle of operation, symbol) pinch of voltage, voltage-ampere characteristics, the JFET small signal model, MOSFET construction, principle of operation, symbol) , MOSFET characteristics in enhancement and depletion modes. Millman Jacob Halkias C Christos “Electronic Devices and. Circuits”, 2nd Edition, Tata Mcgrawhill Publications, 2007. 2. Boylestad. Robert “Electronic Devices.

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Millman halkias-electronic devices circuits-text - SlideShare Ideal versus Practical – Resistance levels ( static and dynamic0 Transition and diffusion capacitances. UNIT- VII: FET AMPLIFIERS : FET Common Source Amlifiere, Common Drain Amplifier, Generalized FET Amplifier, Biasing FET, FET as Voltage Variable Resistor, Comparision of BJT, and FET., Uni junction Transistor. Dec 22, 2015. Electronic Devices and Circuits MILLMAN & HALKIAS INTERNATIONAL STUDENT EDI"

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Electronic Devices and Circuits

Electronic Devices and Circuits Comparision of CB, CE, and CC amplifiers, configurations. David Bell “ Electronic Devices and Circuits”,Oxford University Press. References 1. Jacob Millman, Christos C Halkias, Satyabrata JIT, “Millman's Electronic.

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